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IPP320N20N3GXKSA1
Power MOSFET, N Channel, 200 V, 34 A, 0.028 ohm, TO-220, Through Hole
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ManufacturerINFINEON
Manufacturer Part NoIPP320N20N3GXKSA1
Order Code2212867
Also Known AsIPP320N20N3 G, SP000677842
Technical Datasheet
2,519 In Stock
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2179 Next business day delivery available(Shanghai stock)
340 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY20.810 (CNY23.5153) |
| 10+ | CNY15.920 (CNY17.9896) |
| 100+ | CNY12.680 (CNY14.3284) |
| 500+ | CNY10.810 (CNY12.2153) |
| 1000+ | CNY10.210 (CNY11.5373) |
Price for:Each
Minimum: 1
Multiple: 1
CNY20.81 (CNY23.52 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP320N20N3GXKSA1
Order Code2212867
Also Known AsIPP320N20N3 G, SP000677842
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id34A
Drain Source On State Resistance0.028ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation136W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IPP320N20N3 G is a N-channel Power MOSFET with performance leading OptiMOS™ benchmark technology. It is perfectly suited for synchronous rectification in 48V systems, DC-to-DC converters, uninterruptable power supplies (UPS) and inverters.
- Lowest Qg and Qgd
- World's lowest FOM, MSL 1 rated
- Highest efficiency
- Highest power density
- Lowest board space consumption
- Minimal device paralleling required
- Environmentally friendly
- Easy-to-design-in products
- Ideal for high-frequency switching and synchronous rectification
- Qualified according to JEDEC for target application
- Halogen-free, Green device
Applications
Industrial, Audio, LED Lighting, Motor Drive & Control, Power Management, Lighting
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
34A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
136W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.028ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (1)
Associated Products
7 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003184