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IPP80N06S209AKSA2
Power MOSFET, N Channel, 55 V, 80 A, 0.0076 ohm, TO-220, Through Hole
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP80N06S209AKSA2
Order Code2781101
Product RangeOptiMOS
Also Known AsIPP80N06S2-09, SP001061400
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id80A
Drain Source On State Resistance0.0076ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation190W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS
QualificationAEC-Q101
Alternatives for IPP80N06S209AKSA2
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Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
190W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (27-Jun-2018)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.0076ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
OptiMOS
MSL
MSL 1 - Unlimited
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001