Print Page
IRF7309TRPBF
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 4 A, 4 A, 0.05 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF7309TRPBF
Order Code2468006RL
Also Known AsSP001554164
Your Part Number
Technical Datasheet
5,277 In Stock
Need more?
275 Next business day delivery available(Shanghai stock)
5002 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY4.180 (CNY4.7234) |
| 500+ | CNY3.250 (CNY3.6725) |
| 1000+ | CNY2.320 (CNY2.6216) |
| 5000+ | CNY2.230 (CNY2.5199) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY418.00 (CNY472.34 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7309TRPBF
Order Code2468006RL
Also Known AsSP001554164
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id4A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.05ohm
Continuous Drain Current Id N Channel4A
Continuous Drain Current Id P Channel4A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.05ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.05ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1V
No. of Pins8Pins
Power Dissipation Pd1.4W
Power Dissipation N Channel1.4W
Power Dissipation P Channel1.4W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
4A
On Resistance Rds(on)
0.05ohm
Continuous Drain Current Id P Channel
4A
Drain Source On State Resistance N Channel
0.05ohm
Drain Source On State Resistance P Channel
0.05ohm
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
1.4W
Power Dissipation P Channel
1.4W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
4A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
1.4W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000277