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| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY6.980 (CNY7.8874) |
| 50+ | CNY4.780 (CNY5.4014) |
| 250+ | CNY3.790 (CNY4.2827) |
| 1000+ | CNY3.340 (CNY3.7742) |
| 2000+ | CNY3.320 (CNY3.7516) |
Product Information
Product Overview
The IRF7316TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Surface-mount device
- Fully avalanche rated
Applications
Industrial, Power Management
Technical Specifications
P Channel
30V
4.9A
0.042ohm
8Pins
2W
-
MSL 1 - Unlimited
30V
4.9A
0.042ohm
SOIC
2W
150°C
-
No SVHC (25-Jun-2025)
Associated Products
3 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate