IRF7342TRPBF
Dual MOSFET, P Channel, 55 V, 55 V, 3.4 A, 3.4 A, 0.095 ohm
4,000 more incoming. You can reserve stock now
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY10.990 (CNY12.4187) |
| 10+ | CNY7.320 (CNY8.2716) |
| 100+ | CNY4.930 (CNY5.5709) |
| 500+ | CNY4.410 (CNY4.9833) |
| 1000+ | CNY3.440 (CNY3.8872) |
| 5000+ | CNY3.380 (CNY3.8194) |
Product Information
Product Overview
The IRF7342TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
Applications
Industrial, Power Management
Technical Specifications
P Channel
55V
3.4A
0.095ohm
8Pins
2W
-
-
55V
3.4A
0.095ohm
SOIC
2W
150°C
-
No SVHC (21-Jan-2025)
Associated Products
3 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate