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ManufacturerINFINEON
Manufacturer Part NoIRF8313TRPBF
Order Code2468027RL
Also Known AsSP001577640
Technical Datasheet
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF8313TRPBF
Order Code2468027RL
Also Known AsSP001577640
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id9.7A
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel9.7A
On Resistance Rds(on)0.0125ohm
Continuous Drain Current Id P Channel9.7A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0125ohm
Drain Source On State Resistance P Channel0.0125ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.8V
Power Dissipation Pd2W
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max175°C
Product Range-
Qualification-
Automotive Qualification Standard-
Alternatives for IRF8313TRPBF
1 Product Found
Product Overview
The IRF8313TRPBF is a dual N-channel Power MOSFET incorporates the latest HEXFET power silicon technology into the industry standard package. It has been optimized for parameters that are critical in synchronous buck operation including RDS (ON) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-to-DC converters that power the latest generation of processors for notebook and Netcom applications.
- Low gate charge and low RDS (ON)
- Fully characterized avalanche voltage and current
- Halogen-free
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
9.7A
Continuous Drain Current Id N Channel
9.7A
Continuous Drain Current Id P Channel
9.7A
Drain Source On State Resistance N Channel
0.0125ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.8V
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (23-Jan-2024)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.0125ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.0125ohm
Transistor Case Style
SOIC
Power Dissipation Pd
2W
Power Dissipation N Channel
2W
Operating Temperature Max
175°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000127