IRFB5620PBF
Power MOSFET, N Channel, 200 V, 25 A, 0.0725 ohm, TO-220AB, Through Hole
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY15.540 (CNY17.5602) |
| 10+ | CNY11.200 (CNY12.656) |
| 100+ | CNY8.970 (CNY10.1361) |
| 500+ | CNY7.470 (CNY8.4411) |
| 1000+ | CNY6.920 (CNY7.8196) |
| 5000+ | CNY6.360 (CNY7.1868) |
Product Information
Product Overview
The IRFB5620PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device. It can deliver up to 300W per channel into 8Ω load in half-bridge configuration amplifier. It is suitable for full-bridge and push-pull application.
- Low RDS (ON) for improved efficiency
- Low Qg and Qsw for better THD and improved efficiency
- Low QRR for better THD and lower EMI
Applications
Audio, Consumer Electronics, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
25A
TO-220AB
10V
144W
175°C
-
No SVHC (21-Jan-2025)
200V
0.0725ohm
Through Hole
5V
3Pins
-
-
Technical Docs (1)
Alternatives for IRFB5620PBF
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Associated Products
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate