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IRFH5250DTRPBF
Power MOSFET, N Channel, 25 V, 100 A, 0.001 ohm, QFN, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIRFH5250DTRPBF
Order Code2781124
Product RangeHEXFET Series
Also Known AsSP001577928
Technical Datasheet
3,785 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY11.330 (CNY12.8029) |
| 10+ | CNY9.640 (CNY10.8932) |
| 100+ | CNY7.750 (CNY8.7575) |
| 500+ | CNY6.860 (CNY7.7518) |
| 1000+ | CNY5.860 (CNY6.6218) |
| 5000+ | CNY5.780 (CNY6.5314) |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
CNY11.33 (CNY12.80 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFH5250DTRPBF
Order Code2781124
Product RangeHEXFET Series
Also Known AsSP001577928
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id100A
Drain Source On State Resistance0.001ohm
Transistor Case StyleQFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Power Dissipation156W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
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Product Overview
IRFH5250DTRPBF is a HEXFET® power MOSFET. Applications include synchronous MOSFET for high frequency buck converters.
- Low RDSon (<lt/>1.4mohm), lower conduction losses
- Schottky intrinsic diode with low forward voltage, lower switching losses
- Low thermal resistance to PCB (<lt/>0.8°C/W), enable better thermal dissipation
- 100%Rg tested, increased reliability
- Low profile (<lt/>0.9mm), increased power density
- Industry-standard pinout, multi-vendor compatibility
- Compatible with existing surface mount techniques, easier manufacturing
- Environmentally friendlier, increased reliability
- 25V minimum drain-to-source breakdown voltage (VGS = 0V, ID = 1.0mA, TJ = 25°C)
- BF PQFN package, operating junction and storage temperature range from -55 to + 150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
QFN
Rds(on) Test Voltage
10V
Power Dissipation
156W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
25V
Drain Source On State Resistance
0.001ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.8V
No. of Pins
8Pins
Product Range
HEXFET Series
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000025