IRFR120NTRPBF
Power MOSFET, N Channel, 100 V, 9.4 A, 0.21 ohm, TO-252AA, Surface Mount
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY10.540 (CNY11.9102) |
| 10+ | CNY5.360 (CNY6.0568) |
| 100+ | CNY4.160 (CNY4.7008) |
| 500+ | CNY3.560 (CNY4.0228) |
| 1000+ | CNY2.580 (CNY2.9154) |
| 5000+ | CNY2.530 (CNY2.8589) |
Product Information
Product Overview
The IRFR120NTRPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation level of 1.5W is possible in a typical surface-mount application.
- Advanced process technology
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
Applications
Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
9.4A
TO-252AA
10V
48W
175°C
-
No SVHC (25-Jun-2025)
100V
0.21ohm
Surface Mount
4V
3Pins
-
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate