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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY11.150 (CNY12.5995) |
| 10+ | CNY7.540 (CNY8.5202) |
| 100+ | CNY5.290 (CNY5.9777) |
| 500+ | CNY4.180 (CNY4.7234) |
| 1000+ | CNY3.720 (CNY4.2036) |
| 5000+ | CNY3.420 (CNY3.8646) |
Product Information
Product Overview
The IRFR5410TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
- Advanced process technology
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
Applications
Automotive, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
P Channel
13A
TO-252AA
10V
66W
150°C
-
No SVHC (25-Jun-2025)
100V
0.205ohm
Surface Mount
4V
3Pins
-
MSL 1 - Unlimited
Technical Docs (3)
Alternatives for IRFR5410TRPBF
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Associated Products
4 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate