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IRLML2402TRPBF
Power MOSFET, N Channel, 20 V, 1.2 A, 0.25 ohm, SOT-23, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIRLML2402TRPBF
Order Code9102710
Also Known AsSP001552710
Technical Datasheet
28,821 In Stock
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13430 Next business day delivery available(Shanghai stock)
15391 Delivery in 5-6 Business Days(UK stock)
Available until stock is exhausted
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY2.260 (CNY2.5538) |
| 50+ | CNY1.530 (CNY1.7289) |
| 250+ | CNY1.170 (CNY1.3221) |
| 1000+ | CNY0.832 (CNY0.9402) |
| 3000+ | CNY0.709 (CNY0.8012) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
CNY11.30 (CNY12.77 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLML2402TRPBF
Order Code9102710
Also Known AsSP001552710
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1.2A
Drain Source On State Resistance0.25ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max700mV
Power Dissipation540mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCTo Be Advised
Alternatives for IRLML2402TRPBF
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Product Overview
IRLML2402TRPBF is a HEXFET® power MOSFET. It utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. Typical applications include roof control module, automotive head unit, EV charging, telecommunications infrastructure.
- Planar cell structure for wide SOA, industry standard surface-mount package
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Increased ruggedness, industry standard qualification level
- High performance in low frequency applications, standard pinout allows for drop in replacement
- Drain to source breakdown voltage is 20V min at VGS=0V, ID=250µA
- Static drain to source on-resistance is 0.25ohm max at VGS=4.5V, ID=0.93A
- Micro3™ (SOT-23) package
- Junction and storage temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.2A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
540mW
Operating Temperature Max
150°C
Qualification
-
SVHC
To Be Advised
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.25ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
700mV
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000033