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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY1.840 (CNY2.0792) |
| 500+ | CNY1.670 (CNY1.8871) |
| 1500+ | CNY1.630 (CNY1.8419) |
Product Information
Product Overview
The IRLMS2002TRPBF is a HEXFET® N-channel Power MOSFET utilizes advanced processing techniques to achieve the extremely low ON-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6™ package with its customized lead-frame produces a HEXFET® power MOSFET. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS (ON) reduction enables a current-handling increase of nearly 300%.
- Ultra-low ON-resistance
Applications
Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
6.5A
SOT-23
4.5V
2W
150°C
-
No SVHC (21-Jan-2025)
20V
0.03ohm
Surface Mount
1.2V
6Pins
HEXFET
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate