IRLR2905TRPBF
Power MOSFET, N Channel, 55 V, 42 A, 0.027 ohm, TO-252AA, Surface Mount
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| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY7.070 (CNY7.9891) |
| 50+ | CNY6.060 (CNY6.8478) |
| 100+ | CNY5.050 (CNY5.7065) |
| 500+ | CNY4.210 (CNY4.7573) |
| 1000+ | CNY3.900 (CNY4.407) |
Product Information
Product Overview
The IRLR2905TRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
- Logic level gate drive
- Advanced process technology
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
Applications
Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
42A
TO-252AA
10V
110W
175°C
-
No SVHC (21-Jan-2025)
55V
0.027ohm
Surface Mount
2V
3Pins
-
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate