Print Page
ISC022N10NM6ATMA1
Power MOSFET, N Channel, 100 V, 230 A, 2240 µohm, TSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoISC022N10NM6ATMA1
Order Code3873732
Product RangeOptiMOS 6 Series
Also Known AsSP005339558, ISC022N10NM6
Your Part Number
Technical Datasheet
Available to Order
Notify me when back in stock
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY28.870 (CNY32.6231) |
| 50+ | CNY20.570 (CNY23.2441) |
| 250+ | CNY19.530 (CNY22.0689) |
| 1000+ | CNY18.250 (CNY20.6225) |
| 3000+ | CNY17.890 (CNY20.2157) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
CNY144.35 (CNY163.12 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoISC022N10NM6ATMA1
Order Code3873732
Product RangeOptiMOS 6 Series
Also Known AsSP005339558, ISC022N10NM6
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id230A
Drain Source On State Resistance2240µohm
Transistor Case StyleTSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.8V
Power Dissipation254W
No. of Pins8Pins
Operating Temperature Max175°C
Product RangeOptiMOS 6 Series
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
ISC022N10NM6ATMA1 is an OptiMOS™6 power-transistor. It is fully qualified according to JEDEC for industrial applications.
- N-channel, normal level, very low on-resistance RDS(on)
- Excellent gate charge xRDS (on) product (FOM)
- Very low reverse recovery charge (Qrr)
- High avalanche energy rating
- Optimized for high frequency switching and synchronous rectification
- Drain-source breakdown voltage is 100V min at VGS=0V,ID=1mA, Tj=25°C
- Drain-source on-state resistance is 1.8mohm typ at VGS=10V, ID=50A, Tj=25°C
- Diode continuous forward current is 212A max at TC=25°C
- PG-TSON-8 package
- Operating and storage temperature range from -55 to 175°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
230A
Transistor Case Style
TSON
Rds(on) Test Voltage
10V
Power Dissipation
254W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
2240µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.8V
No. of Pins
8Pins
Product Range
OptiMOS 6 Series
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000121