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SPD04N60C3ATMA1
Power MOSFET, N Channel, 650 V, 4.5 A, 0.95 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoSPD04N60C3ATMA1
Order Code2212855
Also Known AsSPD04N60C3, SP001117764
Technical Datasheet
1,379 In Stock
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336 Next business day delivery available(Shanghai stock)
1043 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY13.520 (CNY15.2776) |
| 10+ | CNY10.010 (CNY11.3113) |
| 100+ | CNY7.010 (CNY7.9213) |
| 500+ | CNY5.880 (CNY6.6444) |
| 1000+ | CNY5.700 (CNY6.441) |
| 5000+ | CNY5.510 (CNY6.2263) |
Price for:Each
Minimum: 1
Multiple: 1
CNY13.52 (CNY15.28 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoSPD04N60C3ATMA1
Order Code2212855
Also Known AsSPD04N60C3, SP001117764
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id4.5A
Drain Source On State Resistance0.95ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation50W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SPD04N60C3 is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is suitable for server, telecom, PC power and adapter applications.
- New revolutionary high voltage technology
- Extreme dV/dt rated
- High peak current capability
- Qualified according to JEDEC for target applications
- Improved transconductance
- Periodic avalanche rated
- Low specific ON-state resistance
- Very low energy storage in output capacitance (Eoss)@400V
- Field proven CoolMOS™ quality
- High efficiency and power density
- Outstanding performance
- High reliability
- Ease of use
Applications
Industrial, Communications & Networking, Consumer Electronics, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
4.5A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
50W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.95ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001134