SPW20N60CFDFKSA1
Power MOSFET, N Channel, 600 V, 8.3 A, 0.22 ohm, TO-247, Through Hole
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY31.680 (CNY35.7984) |
| 10+ | CNY27.640 (CNY31.2332) |
| 100+ | CNY24.670 (CNY27.8771) |
| 500+ | CNY21.690 (CNY24.5097) |
| 1000+ | CNY18.710 (CNY21.1423) |
Product Information
Product Overview
The SPW20N60CFD is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. The CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD combines the experience of the leading SJ MOSFET supplier with high class innovation. It has outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness. It is suitable for server, telecom, PC power, solar, phase-shift ZVS, DC-to-AC power and adapter applications.
- New revolutionary high voltage technology
- Extreme dV/dt rated
- Qualified according to JEDEC for target applications
- Intrinsic fast-recovery body diode
- Periodic avalanche rated
- Extreme low reverse recovery charge
- High peak current capability
- Improved efficiency
- More efficient, more compact, lighter and cooler
Applications
Industrial, Power Management, Consumer Electronics, Communications & Networking, Alternative Energy
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
8.3A
TO-247
10V
35W
150°C
-
No SVHC (21-Jan-2025)
600V
0.22ohm
Through Hole
4V
3Pins
-
-
Technical Docs (1)
Associated Products
3 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate