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Quantity | Price (inc GST) |
---|---|
1+ | CNY40.410 (CNY45.6633) |
10+ | CNY37.640 (CNY42.5332) |
25+ | CNY36.450 (CNY41.1885) |
50+ | CNY35.620 (CNY40.2506) |
100+ | CNY34.430 (CNY38.9059) |
250+ | CNY33.530 (CNY37.8889) |
500+ | CNY32.720 (CNY36.9736) |
Product Information
Product Overview
IS62WV51216EBLL-45TLI is a 512Kx16 low voltage, ultra-low power CMOS static RAM. It is a high-speed, 8Mbit static RAM organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When active-low CS1 is HIGH (deselected) or when CS2 is low (deselected) or when active-low CS1 is low, CS2 is high and both active-low LB and active-low UB and are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
- High-speed access time is 45ns
- CMOS low power operation, 36mW (typical) operating
- TTL compatible interface levels
- Single power supply is 2.2V-3.6V VDD
- Data control for upper and lower bytes
- Input capacitance is 10pF (TA = 25°C, f = 1MHz, VDD = VDD(typ))
- TSOP-II package
- Industrial temperature rating range from -40°C to +85°C
Technical Specifications
-
512K x 16bit
44Pins
3.6V
-
-40°C
-
No SVHC (16-Jul-2019)
8Mbit
TSOP
2.2V
3.3V
Surface Mount
85°C
MSL 3 - 168 hours
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate