IRF7306TRPBF
Dual MOSFET, P Channel, 30 V, 30 V, 3.6 A, 3.6 A, 0.1 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY5.810 (CNY6.5653) |
| 50+ | CNY4.470 (CNY5.0511) |
| 250+ | CNY3.500 (CNY3.955) |
| 1000+ | CNY3.190 (CNY3.6047) |
| 2000+ | CNY2.990 (CNY3.3787) |
Product Information
Product Overview
The IRF7306TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
P Channel
30V
3.6A
0.1ohm
8Pins
2W
-
MSL 1 - Unlimited
30V
3.6A
0.1ohm
SOIC
2W
150°C
-
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate