Print Page
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Notify me when back in stock
Quantity | Price (inc GST) |
---|---|
1+ | CNY72.820 (CNY82.2866) |
5+ | CNY65.500 (CNY74.015) |
10+ | CNY58.180 (CNY65.7434) |
50+ | CNY57.430 (CNY64.8959) |
100+ | CNY56.680 (CNY64.0484) |
250+ | CNY48.360 (CNY54.6468) |
Price for:Each
Minimum: 1
Multiple: 1
CNY72.82 (CNY82.29 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFH30N50P
Order Code1427297
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id30A
Drain Source On State Resistance0.2ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation460W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Jan-2023)
Product Overview
The IXFH30N50P is a 500V N-channel Enhancement Mode PolarHV™ Power MOSFET with fast intrinsic diode (HiPerFET™) and reduced RDS (on). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
- Unclamped Inductive Switching (UIS) rated
- Low inductance offers easy to drive and protect
- Easy to mount
- Space-saving s
- High power density
Applications
Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
460W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.2ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.006