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Quantity | Price (inc GST) |
---|---|
1+ | CNY133.360 (CNY150.6968) |
5+ | CNY124.470 (CNY140.6511) |
10+ | CNY115.580 (CNY130.6054) |
50+ | CNY113.400 (CNY128.142) |
100+ | CNY111.210 (CNY125.6673) |
250+ | CNY108.950 (CNY123.1135) |
Product Information
Product Overview
The IXFK98N50P3 is a Polar3™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). The Polar3™ power MOSFET family is the latest addition to IXYS benchmark high-performance polar-series power MOSFET product line. This new device is manufactured using IXYS proprietary Polar3™ technology platform, yielding new and improved device that features an optimized combination of low ON-state resistance and gate charge. The end result is a device that achieves a figure of merit (FOM) performance index (device ON-resistance multiplied by gate charge) as low as 9.6ΩnC. Additional device features include low thermal resistances (RthJC), dynamic dV/dt ratings, high power dissipation (Pd) and high avalanche energy capabilities. These outstanding electrical and thermal device characteristics are essential for implementing improved power efficiency and reliability in today's demanding high-voltage conversion system.
- Dynamic dV/dt rating
- Avalanche rating
- Low Qg
- Low static drain-to-source ON-resistance
- Low drain-to-tab capacitance
- Low package inductance
- Easy to mount
- Space saving
Applications
Power Management, Motor Drive & Control
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
98A
TO-264AA
10V
1.3kW
150°C
-
500V
0.05ohm
Through Hole
5V
3Pins
-
Technical Docs (3)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate