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IXFN420N10T
MOSFET Transistor, N Channel, 420 A, 100 V, 0.0023 ohm, 10 V, 5 V, SOT-227B
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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN420N10T
Order Code3438388
Product RangeGigaMOS HiperFET
Technical Datasheet
255 In Stock
300 more incoming. You can reserve stock now
255 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY227.630 (CNY257.2219) |
| 5+ | CNY216.480 (CNY244.6224) |
| 10+ | CNY205.330 (CNY232.0229) |
| 50+ | CNY194.180 (CNY219.4234) |
| 100+ | CNY183.020 (CNY206.8126) |
Price for:Each
Minimum: 1
Multiple: 1
CNY227.63 (CNY257.22 inc GST)
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN420N10T
Order Code3438388
Product RangeGigaMOS HiperFET
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id420A
Drain Source Voltage Vds100V
Drain Source On State Resistance0.0023ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation1.07kW
Operating Temperature Max175°C
Product RangeGigaMOS HiperFET
SVHCNo SVHC (12-Jan-2017)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Rds(on) Test Voltage
10V
Power Dissipation
1.07kW
Product Range
GigaMOS HiperFET
Continuous Drain Current Id
420A
Drain Source On State Resistance
0.0023ohm
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
175°C
SVHC
No SVHC (12-Jan-2017)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (12-Jan-2017)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004