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IXTA3N120
Power MOSFET, N Channel, 1.2 kV, 3 A, 4.5 ohm, TO-263AA, Surface Mount
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1,780 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY63.020 (CNY71.2126) |
| 5+ | CNY59.560 (CNY67.3028) |
| 10+ | CNY56.100 (CNY63.393) |
| 50+ | CNY48.200 (CNY54.466) |
| 100+ | CNY40.150 (CNY45.3695) |
| 250+ | CNY39.350 (CNY44.4655) |
Price for:Each
Minimum: 1
Multiple: 1
CNY63.02 (CNY71.21 inc GST)
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTA3N120
Order Code3438407
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds1.2kV
Continuous Drain Current Id3A
Drain Source On State Resistance4.5ohm
Transistor Case StyleTO-263AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation200W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3A
Transistor Case Style
TO-263AA
Rds(on) Test Voltage
10V
Power Dissipation
200W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (12-Jan-2017)
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
4.5ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (12-Jan-2017)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0025