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IXTH10P60
Power MOSFET, P Channel, 600 V, 10 A, 1 ohm, TO-247, Through Hole
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5 In Stock
960 more incoming. You can reserve stock now
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY89.100 (CNY100.683) |
| 5+ | CNY77.840 (CNY87.9592) |
| 10+ | CNY66.580 (CNY75.2354) |
| 50+ | CNY65.470 (CNY73.9811) |
| 100+ | CNY64.350 (CNY72.7155) |
| 250+ | CNY62.850 (CNY71.0205) |
Price for:Each
Minimum: 1
Multiple: 1
CNY89.10 (CNY100.68 inc GST)
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTH10P60
Order Code3438411
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id10A
Drain Source On State Resistance1ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (12-Jan-2017)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
10A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
1ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (12-Jan-2017)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (12-Jan-2017)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004