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127 In Stock
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Quantity | Price (inc GST) |
---|---|
1+ | CNY621.570 (CNY702.3741) |
5+ | CNY543.880 (CNY614.5844) |
10+ | CNY450.640 (CNY509.2232) |
50+ | CNY404.020 (CNY456.5426) |
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Multiple: 1
CNY621.57 (CNY702.37 inc GST)
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXGN200N170
Order Code3930412
Technical Datasheet
IGBT ConfigurationSingle
Continuous Collector Current280A
Collector Emitter Saturation Voltage2.1V
Power Dissipation1.25kW
Operating Temperature Max150°C
Transistor Case StyleSOT-227B
IGBT TerminationStud
Collector Emitter Voltage Max1.7kV
IGBT Technology-
Transistor MountingPanel
Product Range-
Product Overview
High voltage IGBT suitable for use in power inverters, UPS, motor drives, SMPS, PFC circuits and welding machines.
- miniBLOC with aluminium nitride isolation
- Isolation voltage 2500V
- High current handling capability
- High power density
- Low gate drive requirement
Technical Specifications
IGBT Configuration
Single
Collector Emitter Saturation Voltage
2.1V
Operating Temperature Max
150°C
IGBT Termination
Stud
IGBT Technology
-
Product Range
-
Continuous Collector Current
280A
Power Dissipation
1.25kW
Transistor Case Style
SOT-227B
Collector Emitter Voltage Max
1.7kV
Transistor Mounting
Panel
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001