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MT29F2G08ABAEAWP:E
Flash Memory, SLC NAND, 2 Gbit, 256M x 8bit, Parallel, TSOP-I, 48 Pins
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ManufacturerMICRON
Manufacturer Part NoMT29F2G08ABAEAWP:E
Order Code3677180
Product Range3.3V Parallel NAND Flash Memories
Your Part Number
Technical Datasheet
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY24.580 (CNY27.7754) |
| 10+ | CNY22.940 (CNY25.9222) |
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CNY24.58 (CNY27.78 inc GST)
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Product Information
ManufacturerMICRON
Manufacturer Part NoMT29F2G08ABAEAWP:E
Order Code3677180
Product Range3.3V Parallel NAND Flash Memories
Technical Datasheet
Flash Memory TypeSLC NAND
Memory Density2Gbit
Memory Configuration256M x 8bit
InterfacesParallel
IC Case / PackageTSOP-I
No. of Pins48Pins
Clock Frequency Max-
Access Time16ns
Supply Voltage Min2.7V
Supply Voltage Max3.6V
Supply Voltage Nom3.3V
IC MountingSurface Mount
Operating Temperature Min0°C
Operating Temperature Max70°C
Product Range3.3V Parallel NAND Flash Memories
SVHCNo SVHC (17-Dec-2015)
Product Overview
MT29F2G08ABAEAWP:E is a NAND flash memory. This NAND flash device includes an asynchronous data interface for high-performance I/O operations. This device uses a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND flash dies. A NAND flash die is the minimum unit that can independently execute commands and report status. This device has an internal 4-bit ECC that can be enabled using the GET/SET features.
- Open NAND flash interface (ONFI) 1.0-compliant
- Single-level cell (SLC) technology
- Command set: ONFI NAND flash protocol
- Operation status byte provides software method for detecting: operation completion
- Pass/fail condition, write-protect status
- Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
- RESET (FFh) required as first command after power-on
- Alternate method of device initialization (Nand-Init) after power up (contact factory)
- 3.3V (2.7 to 3.6V) operating voltage range
- 48-pin TSOP package, 0°C to +70°C commercial operating temperature range
Technical Specifications
Flash Memory Type
SLC NAND
Memory Configuration
256M x 8bit
IC Case / Package
TSOP-I
Clock Frequency Max
-
Supply Voltage Min
2.7V
Supply Voltage Nom
3.3V
Operating Temperature Min
0°C
Product Range
3.3V Parallel NAND Flash Memories
SVHC
No SVHC (17-Dec-2015)
Memory Density
2Gbit
Interfaces
Parallel
No. of Pins
48Pins
Access Time
16ns
Supply Voltage Max
3.6V
IC Mounting
Surface Mount
Operating Temperature Max
70°C
MSL
MSL 3 - 168 hours
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Singapore
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Singapore
Country in which last significant manufacturing process was carried out
Tariff No:85235110
US ECCN:3A991.b.1.a
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001013