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Quantity | Price (inc GST) |
---|---|
1+ | CNY25.980 (CNY29.3574) |
10+ | CNY24.010 (CNY27.1313) |
25+ | CNY23.280 (CNY26.3064) |
50+ | CNY22.480 (CNY25.4024) |
100+ | CNY21.810 (CNY24.6453) |
250+ | CNY21.530 (CNY24.3289) |
500+ | CNY20.790 (CNY23.4927) |
1000+ | CNY20.380 (CNY23.0294) |
Product Information
Product Overview
MT29F2G08ABAEAWP-IT:E is a NAND flash memory. It includes an asynchronous data interface for high-performance I/O operations. This device uses a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable signal.
- Open NAND flash interface (ONFI) 1.0-compliant, single-level cell (SLC) technology
- Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
- WP# signal: write protect entire device
- Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000
- RESET (FFh) required as first command after power-on
- Internal data move operations supported within the plane from which data is read
- Data retention: 10 years, endurance: 100,000 PROGRAM/ERASE cycles
- 2Gb density
- 3.3V (2.7–3.6V) operating voltage range
- 48-pin TSOP package, -40°C to +85°C industrial operating temperature range
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
SLC NAND
256M x 8bit
TSOP
50MHz
2.7V
3.3V
-40°C
3.3V Parallel NAND Flash Memories
No SVHC (17-Dec-2015)
2Gbit
Parallel
48Pins
16ns
3.6V
Surface Mount
85°C
MSL 3 - 168 hours
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Singapore
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate