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Quantity | Price (inc GST) |
---|---|
1+ | CNY47.490 (CNY53.6637) |
10+ | CNY44.180 (CNY49.9234) |
25+ | CNY42.840 (CNY48.4092) |
50+ | CNY41.830 (CNY47.2679) |
100+ | CNY40.680 (CNY45.9684) |
250+ | CNY39.390 (CNY44.5107) |
500+ | CNY37.450 (CNY42.3185) |
Product Information
Product Overview
MT29F8G08ABACA is a NAND flash memory. NAND flash device include an asynchronous data interface for high-performance I/O operations. This device use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign.
- Single-level cell (SLC) technology, asynchronous I/O performance
- Array performance, program page is 200µs (typical)
- Command set is ONFI NAND flash protocol, advanced command set
- Program page cache mode, read page cache mode, one-time programmable (OTP) mode
- Operation status byte provides software method for detecting, operation completion
- Pass/fail condition, write-protect status, quality and reliability
- RESET (FFh) required as first command after power-on
- 8Gb density, 8bit device width, SLC level
- 3.3V (2.7–3.6V) operating voltage, asynchronous interface
- 63-ball VFBGA (9 x 11 x 1.0mm) package, industrial operating temperature range from –40°C to +85°C
Technical Specifications
SLC NAND
1G x 8bit
VFBGA
50MHz
2.7V
3.3V
-40°C
3.3V Parallel NAND Flash Memories
8Gbit
Parallel
63Pins
16ns
3.6V
Surface Mount
85°C
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate