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MT53E256M32D2FW-046 AAT:B
DRAM, Mobile LPDDR4, 8 Gbit, 256M x 32bit, 2.133 GHz, TFBGA, 200 Pins
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY151.010 (CNY170.6413) |
| 10+ | CNY137.860 (CNY155.7818) |
| 25+ | CNY124.270 (CNY140.4251) |
| 50+ | CNY120.070 (CNY135.6791) |
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CNY151.01 (CNY170.64 inc GST)
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Product Information
ManufacturerMICRON
Manufacturer Part NoMT53E256M32D2FW-046 AAT:B
Order Code4050879
Technical Datasheet
DRAM TypeMobile LPDDR4
Memory Density8Gbit
Memory Configuration256M x 32bit
Clock Frequency Max2.133GHz
IC Case / PackageTFBGA
No. of Pins200Pins
Supply Voltage Nom1.1V
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max105°C
Product Range-
Product Overview
MT53E256M32D2FW-046 AAT:B is a 4Gb mobile low-power DDR4 SDRAM with low VDDQ. It is a high-speed CMOS, dynamic random-access memory. This memory is internally configured with x16 I/O, 8-banks. Each of the x16’s 536,870,912-bit banks are organized as 32,768 rows by 1024 columns by 16bits. It has directed per-bank refresh for concurrent bank operation and ease of command scheduling. This memory has on-chip temperature sensor to control self refresh rate. It has clock-stop capability.
- Operating voltage range is 1.10V (VDD2)/0.60V or 1.10V (VDDQ)
- 256Meg x 32 configuration, LPDDR4, 2die addressing, B design
- Packaging style is 200-ball TFBGA 10 x 14.5 x 1.1mm (Ø0.40 SMD)
- Cycle time is 468ps at RL = 36/40, partial-array self refresh (PASR)
- Operating temperature range is –40°C to +105°C, automotive qualified
- Clock rate is 2133MHz, data rate per pin is 4266Mb/s
- Ultra-low-voltage core and I/O power supplies
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), selectable output drive strength (DS)
Technical Specifications
DRAM Type
Mobile LPDDR4
Memory Configuration
256M x 32bit
IC Case / Package
TFBGA
Supply Voltage Nom
1.1V
Operating Temperature Min
-40°C
Product Range
-
Memory Density
8Gbit
Clock Frequency Max
2.133GHz
No. of Pins
200Pins
IC Mounting
Surface Mount
Operating Temperature Max
105°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85423239
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002421