BD241C
Bipolar (BJT) Single Transistor, NPN, 100 V, 3 A, 40 W, TO-220, Through Hole
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| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY8.830 (CNY9.9779) |
| 10+ | CNY7.060 (CNY7.9778) |
| 100+ | CNY5.040 (CNY5.6952) |
| 500+ | CNY3.530 (CNY3.9889) |
| 1000+ | CNY2.530 (CNY2.8589) |
| 5000+ | CNY2.210 (CNY2.4973) |
Product Information
Product Overview
The BD241C is a high-performance NPN silicon power transistor housed in a standard TO-220 package, designed for use in switching and linear amplification circuits. With a collector-emitter voltage rating of 100V and a collector current capability of 3A, it is ideal for demanding applications requiring reliability, thermal efficiency, and durability. Engineered for general-purpose and industrial use, the BD241C offers a power dissipation of up to 65W (with proper heatsinking), making it suitable for driving relays, motors, lamps, and audio loads. Its moderate current gain (hFE) and rugged construction allow it to perform effectively in a wide range of operating environments.
- NPN bipolar junction transistor
- Collector-emitter voltage (VCEO): 100V
- Collector current (IC): up to 3A continuous
- Power dissipation: up to 65W (with heatsink)
- TO-220 package for efficient thermal management
- High reliability and mechanical robustness
Applications
Audio, Signal Processing, LED Lighting, Motor Drive & Control, Power Management, DC/DC Converters, Temperature
Technical Specifications
NPN
3A
TO-220
3Pins
25hFE
Multicomp Pro Bipolar NPN Transistors
MSL 1 - Unlimited
100V
40W
Through Hole
3MHz
150°C
-
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:India
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate