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Quantity | Price (inc GST) |
---|---|
100+ | CNY1.250 (CNY1.4125) |
500+ | CNY0.948 (CNY1.0712) |
1000+ | CNY0.854 (CNY0.965) |
5000+ | CNY0.759 (CNY0.8577) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY125.00 (CNY141.25 inc GST)
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPBSS4160DS,115
Order Code1757960RL
Technical Datasheet
Transistor PolarityDual NPN
Collector Emitter Voltage V(br)ceo60V
Collector Emitter Voltage Max NPN60V
DC Collector Current1A
Collector Emitter Voltage Max PNP-
Power Dissipation Pd420mW
Continuous Collector Current NPN1A
DC Current Gain hFE500hFE
Continuous Collector Current PNP-
Power Dissipation NPN420mW
Power Dissipation PNP-
DC Current Gain hFE Min NPN500hFE
DC Current Gain hFE Min PNP-
Transistor Case StyleSOT-457
No. of Pins6Pins
Transistor MountingSurface Mount
Operating Temperature Max150°C
Transition Frequency NPN220MHz
Transition Frequency PNP-
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The PBSS4160DS,115 is a dual NPN breakthrough small signal (BISS) Bipolar Transistor Array in a surface-mount plastic package. It is suitable for dual low power switch applications. It utilizes required smaller printed-circuit board (PCB) area than for conventional transistors.
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High efficiency due to less heat generation
- PBSS5160DS dual PNP complement
Applications
Automotive, Motor Drive & Control, Power Management, Industrial
Technical Specifications
Transistor Polarity
Dual NPN
Collector Emitter Voltage Max NPN
60V
Collector Emitter Voltage Max PNP
-
Continuous Collector Current NPN
1A
Continuous Collector Current PNP
-
Power Dissipation PNP
-
DC Current Gain hFE Min PNP
-
No. of Pins
6Pins
Operating Temperature Max
150°C
Transition Frequency PNP
-
Qualification
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage V(br)ceo
60V
DC Collector Current
1A
Power Dissipation Pd
420mW
DC Current Gain hFE
500hFE
Power Dissipation NPN
420mW
DC Current Gain hFE Min NPN
500hFE
Transistor Case Style
SOT-457
Transistor Mounting
Surface Mount
Transition Frequency NPN
220MHz
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006