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2N5195G
Bipolar (BJT) Single Transistor, General Purpose, PNP, 80 V, 4 A, 40 W, TO-225, Through Hole
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY9.790 (CNY11.0627) |
| 10+ | CNY6.280 (CNY7.0964) |
| 100+ | CNY4.460 (CNY5.0398) |
| 500+ | CNY3.170 (CNY3.5821) |
| 1000+ | CNY2.970 (CNY3.3561) |
| 5000+ | CNY2.810 (CNY3.1753) |
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CNY9.79 (CNY11.06 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part No2N5195G
Order Code9556451
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max80V
Continuous Collector Current4A
Power Dissipation40W
Transistor Case StyleTO-225
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency2MHz
DC Current Gain hFE Min80hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Product Overview
The 2N5195G is a 4A silicon PNP Power Transistor designed for use in power amplifier and switching circuits and offers excellent safe area limits.
- Complement to NPN 2N5191 and 2N5192
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
4A
Transistor Case Style
TO-225
No. of Pins
3Pins
DC Current Gain hFE Min
80hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
80V
Power Dissipation
40W
Transistor Mounting
Through Hole
Transition Frequency
2MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
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Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00068