FCD4N60TM
Power MOSFET, N Channel, 600 V, 3.9 A, 1.2 ohm, TO-252 (DPAK), Surface Mount
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| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY11.580 (CNY13.0854) |
| 50+ | CNY9.680 (CNY10.9384) |
| 100+ | CNY7.770 (CNY8.7801) |
| 500+ | CNY6.290 (CNY7.1077) |
| 1000+ | CNY6.050 (CNY6.8365) |
Product Information
Product Overview
The FCD4N60TM is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
- Ultra low gate charge (Qg = 12.8nC)
- Low effective output capacitance (Coss.eff = 32pF)
- 100% avalanche tested
Applications
Industrial, Power Management, Communications & Networking, Lighting, Alternative Energy
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
3.9A
TO-252 (DPAK)
10V
50W
150°C
-
Lead (25-Jun-2025)
600V
1.2ohm
Surface Mount
5V
3Pins
-
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate