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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY2.850 (CNY3.2205) |
| 500+ | CNY1.790 (CNY2.0227) |
| 1500+ | CNY1.760 (CNY1.9888) |
Product Information
Product Overview
The FDC5612 is a N-channel MOSFET produced using PowerTrench® technology. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
- High performance Trench technology for extremely low RDS (ON)
- 12.5nC typical low gate charge
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
4.3A
SuperSOT
10V
1.6W
150°C
-
No SVHC (25-Jun-2025)
60V
0.055ohm
Surface Mount
2.2V
6Pins
-
MSL 1 - Unlimited
Technical Docs (3)
Alternatives for FDC5612
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Associated Products
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate