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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD6690A
Order Code9845062
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id46A
Drain Source On State Resistance0.0077ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.9V
Power Dissipation50W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Product Overview
The FDD6690A is a N-channel Logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.
- Low gate charge
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
46A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
50W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (14-Jun-2023)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0077ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.9V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (14-Jun-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000471