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Quantity | Price (inc GST) |
---|---|
100+ | CNY6.380 (CNY7.2094) |
500+ | CNY5.270 (CNY5.9551) |
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Minimum: 100
Multiple: 1
CNY638.00 (CNY720.94 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMC86102L
Order Code2083266RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id18A
Drain Source On State Resistance0.0189ohm
Transistor Case StyleMLP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Power Dissipation41W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDMC86102L is a N-channel MOSFET produced using advanced PowerTrench® process that incorporates shielded gate technology. This process has been optimized for the ON-state resistance and yet maintains superior switching performance.
- Low-profile
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
18A
Transistor Case Style
MLP
Rds(on) Test Voltage
10V
Power Dissipation
41W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0189ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.8V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00015