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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFFSPF2065A
Order Code2895639
Technical Datasheet
Product Range-
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage650V
Average Forward Current20A
Total Capacitive Charge64nC
Diode Case StyleTO-220FP
No. of Pins2 Pin
Operating Temperature Max175°C
Diode MountingThrough Hole
Qualification-
SVHCNo SVHC (15-Jan-2018)
Product Overview
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
- Max Junction Temperature 175°C
- AEC−Q101 qualified
- Avalanche Rated 200 mJ
- No Reverse Recovery/No Forward Recovery
- Ease of Paralleling
- High Surge Current Capacity
- Positive Temperature Coefficient
Technical Specifications
Product Range
-
Repetitive Peak Reverse Voltage
650V
Total Capacitive Charge
64nC
No. of Pins
2 Pin
Diode Mounting
Through Hole
SVHC
No SVHC (15-Jan-2018)
Diode Configuration
Single
Average Forward Current
20A
Diode Case Style
TO-220FP
Operating Temperature Max
175°C
Qualification
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001