Print Page
FQB34P10TM
Power MOSFET, P Channel, 100 V, 33.5 A, 0.06 ohm, TO-263AB, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
2,019 In Stock
Need more?
2019 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY27.570 (CNY31.1541) |
| 10+ | CNY16.960 (CNY19.1648) |
| 100+ | CNY13.830 (CNY15.6279) |
| 500+ | CNY13.040 (CNY14.7352) |
| 800+ | CNY12.260 (CNY13.8538) |
| 1600+ | CNY11.470 (CNY12.9611) |
| 2400+ | CNY10.680 (CNY12.0684) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
CNY27.57 (CNY31.15 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQB34P10TM
Order Code2453432
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id33.5A
Drain Source On State Resistance0.06ohm
Transistor Case StyleTO-263AB
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation3.75W
No. of Pins2Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Product Overview
The FQB34P10TM is a QFET® P-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- 100% avalanche tested
- 85nC typical low gate charge
- 170pF typical low Crss
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
33.5A
Transistor Case Style
TO-263AB
Rds(on) Test Voltage
10V
Power Dissipation
3.75W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.06ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
2Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001312