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FQS4901TF
Dual MOSFET, N Channel, 400 V, 400 V, 450 mA, 450 mA, 3.2 ohm
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQS4901TF
Order Code2453448RL
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel400V
Drain Source Voltage Vds400V
Drain Source Voltage Vds P Channel400V
Continuous Drain Current Id450mA
Continuous Drain Current Id N Channel450mA
On Resistance Rds(on)3.2ohm
Continuous Drain Current Id P Channel450mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel3.2ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel3.2ohm
Transistor Case StyleSOP
Gate Source Threshold Voltage Max4V
Power Dissipation Pd2W
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (10-Jun-2022)
Product Overview
The FQS4901TF is a QFET® dual N-channel MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. The device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low gate charge
- Low Crss (5pF)
- 100% Avalanche tested
- ±25V Gate to source voltage
- 0.45A Continuous drain current
- 0.285A Pulsed drain current
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
400V
Drain Source Voltage Vds P Channel
400V
Continuous Drain Current Id N Channel
450mA
Continuous Drain Current Id P Channel
450mA
Drain Source On State Resistance N Channel
3.2ohm
Drain Source On State Resistance P Channel
3.2ohm
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (10-Jun-2022)
Transistor Polarity
N Channel
Drain Source Voltage Vds
400V
Continuous Drain Current Id
450mA
On Resistance Rds(on)
3.2ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOP
Power Dissipation Pd
2W
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000187