HGTG11N120CND
IGBT, 43 A, 2.4 V, 298 W, 1.2 kV, TO-247, 3 Pins
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY48.110 (CNY54.3643) |
| 10+ | CNY28.650 (CNY32.3745) |
| 100+ | CNY28.080 (CNY31.7304) |
| 500+ | CNY27.500 (CNY31.075) |
| 1000+ | CNY26.930 (CNY30.4309) |
Product Information
Product Overview
The HGTG11N120CND is a 1200V N-channel IGBT with anti-parallel hyper fast diode. It is in a non-punch through (NPT) IGBT design. This NPT series is a new member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
- 340ns at TJ = 150°C Fall time
Technical Specifications
43A
298W
TO-247
150°C
-
Lead (27-Jun-2024)
2.4V
1.2kV
3Pins
Surface Mount
-
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate