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HUF75345S3ST
Power MOSFET, N Channel, 55 V, 75 A, 0.006 ohm, TO-263AB, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 37 week(s)
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY55.640 (CNY62.8732) |
| 10+ | CNY38.230 (CNY43.1999) |
| 100+ | CNY29.570 (CNY33.4141) |
| 500+ | CNY27.640 (CNY31.2332) |
| 800+ | CNY27.090 (CNY30.6117) |
| 1600+ | CNY26.540 (CNY29.9902) |
| 2400+ | CNY25.980 (CNY29.3574) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
CNY55.64 (CNY62.87 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoHUF75345S3ST
Order Code3368838
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id75A
Drain Source On State Resistance0.006ohm
Transistor Case StyleTO-263AB
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation325W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
75A
Transistor Case Style
TO-263AB
Rds(on) Test Voltage
10V
Power Dissipation
325W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.006ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004