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MBT3946DW1T1G
Bipolar Transistor Array, General Purpose, Complementary NPN and PNP, 40 V, 40 V, 200 mA, 200 mA
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ManufacturerONSEMI
Manufacturer Part NoMBT3946DW1T1G
Order Code2442022
Product RangeMJxxxx Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
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| Quantity | Price (inc GST) |
|---|---|
| 3000+ | CNY0.183 (CNY0.2068) |
| 9000+ | CNY0.162 (CNY0.1831) |
| 24000+ | CNY0.156 (CNY0.1763) |
| 45000+ | CNY0.153 (CNY0.1729) |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
CNY549.00 (CNY620.37 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMBT3946DW1T1G
Order Code2442022
Product RangeMJxxxx Series
Technical Datasheet
Transistor PolarityComplementary NPN and PNP
Collector Emitter Voltage Max NPN40V
Collector Emitter Voltage Max PNP40V
Continuous Collector Current NPN200mA
Continuous Collector Current PNP200mA
Power Dissipation NPN150mW
Power Dissipation PNP150mW
DC Current Gain hFE Min NPN250hFE
DC Current Gain hFE Min PNP250hFE
Transistor Case StyleSOT-363
No. of Pins6Pins
Transistor MountingSurface Mount
Operating Temperature Max150°C
Transition Frequency NPN300MHz
Transition Frequency PNP250MHz
Product RangeMJxxxx Series
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The MBT3946DW1T1G is a NPN-PNP complementary Bipolar Transistor Array housed in a surface-mount package designed for general purpose amplifier applications. By putting two discrete devices in one package, this device is ideal for low-power surface-mount applications where board space is at a premium.
- 100 to 300 hFE
- ≤0.4V Low VCE(sat)
- Simplifies circuit design
- Reduces board space
- Reduces component count
- Halogen-free
- -55 to 150°C Junction temperature range
Applications
Power Management, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
Complementary NPN and PNP
Collector Emitter Voltage Max PNP
40V
Continuous Collector Current PNP
200mA
Power Dissipation PNP
150mW
DC Current Gain hFE Min PNP
250hFE
No. of Pins
6Pins
Operating Temperature Max
150°C
Transition Frequency PNP
250MHz
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Collector Emitter Voltage Max NPN
40V
Continuous Collector Current NPN
200mA
Power Dissipation NPN
150mW
DC Current Gain hFE Min NPN
250hFE
Transistor Case Style
SOT-363
Transistor Mounting
Surface Mount
Transition Frequency NPN
300MHz
Product Range
MJxxxx Series
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for MBT3946DW1T1G
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001