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| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY11.160 (CNY12.6108) |
| 50+ | CNY9.260 (CNY10.4638) |
| 100+ | CNY7.330 (CNY8.2829) |
| 500+ | CNY5.680 (CNY6.4184) |
| 1000+ | CNY4.990 (CNY5.6387) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
CNY55.80 (CNY63.05 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Overview
The MJD112T4G is a 2A NPN bipolar power Darlington Transistor designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
- Lead formed for surface-mount applications in plastic sleeves
- Monolithic construction with built-in base-emitter shunt resistors
- Complementary pairs simplifies designs
- Surface-mount replacements for TIP110 to TIP117 series
- AEC-Q101 qualified and PPAP capable
Applications
Industrial, Power Management, Automotive, Signal Processing
Technical Specifications
Transistor Polarity
NPN
Transistor Mounting
Surface Mount
Product Range
-
SVHC
Lead (25-Jun-2025)
No. of Pins
3Pins
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Alternatives for MJD112T4G
2 Products Found
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000426