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MJE5850G
Bipolar (BJT) Single Transistor, PNP, 300 V, 8 A, 80 W, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoMJE5850G
Order Code1459093
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max300V
Continuous Collector Current8A
Power Dissipation80W
Transistor Case StyleTO-220
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min15hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Alternatives for MJE5850G
1 Product Found
Product Overview
The MJE5850G is a 8A PNP bipolar Power Transistor designed for high voltage, high speed and power switching in inductive circuits where fall time is critical.
Applications
Industrial, Power Management, Motor Drive & Control
Notes
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
8A
Transistor Case Style
TO-220
No. of Pins
3Pins
DC Current Gain hFE Min
15hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
300V
Power Dissipation
80W
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (17-Jan-2022)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (17-Jan-2022)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00381