NDP6060L
Power MOSFET, N Channel, 60 V, 48 A, 0.025 ohm, TO-220, Through Hole
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY19.280 (CNY21.7864) |
| 10+ | CNY12.790 (CNY14.4527) |
| 100+ | CNY12.260 (CNY13.8538) |
| 500+ | CNY12.240 (CNY13.8312) |
| 1000+ | CNY12.220 (CNY13.8086) |
Product Information
Product Overview
The NDP6060L is a logic level N-channel enhancement-mode power FET produced using high cell density DMOS technology. This very high density process has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. It is particularly suited for low voltage applications such as DC-to-DC converters and other battery powered circuits where fast-switching, low in-line power loss and resistance to transients are needed. The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
- Low drive requirements allowing operation directly from logic drivers
- Critical DC electrical parameters specified at elevated temperature
- High density cell design for extremely low RDS (ON)
Technical Specifications
N Channel
48A
TO-220
10V
100W
175°C
-
Lead (27-Jun-2024)
60V
0.025ohm
Through Hole
2V
3Pins
-
-
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate