Print Page
Image is for illustrative purposes only. Please refer to product description.
86,309 In Stock
Need more?
35875 Next business day delivery available(Shanghai stock)
50434 Delivery in 5-6 Business Days(UK stock)
Available until stock is exhausted
Quantity | Price (inc GST) |
---|---|
100+ | CNY3.440 (CNY3.8872) |
500+ | CNY2.860 (CNY3.2318) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY344.00 (CNY388.72 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTD5867NLT4G
Order Code1879964RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id20A
Drain Source On State Resistance0.026ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Power Dissipation36W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Alternatives for NTD5867NLT4G
2 Products Found
Product Overview
The NTD5867NLT4G from On Semiconductor is a surface mount, 60V N channel power MOSFET in DPAK package. This device features high current capability, low RDS (on) and avalanche tested thus resulting in minimal conduction losses, robust load performance and voltage overstress safeguard. This MOSFET is used for LED backlighting, DC to DC converter, motor driver and UPS inverter.
- Drain to source voltage (Vds) is 60V
- Gate to source voltage of ±20V(continuous)
- Continuous drain current (Id) is 20A
- Power dissipation (Pd) is 36W
- Operating junction temperature range from -55°C to 150°C
- Gate threshold voltage of 1.8V
- Low on state resistance of 26mohm at Vgs 10V
Applications
Power Management, Consumer Electronics, Portable Devices, Industrial, LED Lighting, Motor Drive & Control
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
20A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
36W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.026ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.8V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Vietnam
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Vietnam
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00049