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NVMFS5C638NLT1G
Power MOSFET, N Channel, 60 V, 133 A, 0.0026 ohm, DFN, Surface Mount
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY21.970 (CNY24.8261) |
| 10+ | CNY14.500 (CNY16.385) |
| 100+ | CNY10.240 (CNY11.5712) |
| 500+ | CNY9.780 (CNY11.0514) |
| 1500+ | CNY9.320 (CNY10.5316) |
| 3000+ | CNY8.860 (CNY10.0118) |
| 4500+ | CNY8.400 (CNY9.492) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
CNY21.97 (CNY24.83 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVMFS5C638NLT1G
Order Code2895722
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id133A
Drain Source On State Resistance0.0026ohm
Transistor Case StyleDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation100W
No. of Pins5Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
133A
Transistor Case Style
DFN
Rds(on) Test Voltage
10V
Power Dissipation
100W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0026ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
5Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001