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NXH80T120L2Q0S2G
IGBT Module, PIM Half Bridge Inverter, 67 A, 2.35 V, 158 mW, 150 °C, PIM
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No Longer Stocked
Product Information
ManufacturerONSEMI
Manufacturer Part NoNXH80T120L2Q0S2G
Order Code2835631
Technical Datasheet
IGBT ConfigurationPIM Half Bridge Inverter
Continuous Collector Current67A
Collector Emitter Saturation Voltage2.35V
Power Dissipation158mW
Operating Temperature Max150°C
Transistor Case StylePIM
IGBT TerminationSolder
Collector Emitter Voltage Max1.2kV
IGBT TechnologyTrench Field Stop
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
IGBT Configuration
PIM Half Bridge Inverter
Collector Emitter Saturation Voltage
2.35V
Operating Temperature Max
150°C
IGBT Termination
Solder
IGBT Technology
Trench Field Stop
Product Range
-
Continuous Collector Current
67A
Power Dissipation
158mW
Transistor Case Style
PIM
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.026838