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Quantity | Price (inc GST) |
---|---|
5+ | CNY8.370 (CNY9.4581) |
10+ | CNY5.930 (CNY6.7009) |
100+ | CNY4.410 (CNY4.9833) |
500+ | CNY3.850 (CNY4.3505) |
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Multiple: 5
CNY41.85 (CNY47.29 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoRFD12N06RLESM9A
Order Code1095139
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id17A
Drain Source On State Resistance0.07ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation49W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Product Overview
The RFD12N06RLESM is an UltraFET N-channel Power MOSFET with ultra-low ON-resistance.
- Temperature compensated PSPICE®/SABER© electrical, SPICE/SABER© thermal impedance simulation models
- Peak current vs. pulse width curve
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
17A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
49W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.07ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00111