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FCPF360N65S3R0L-F154
Power MOSFET, N Channel, 650 V, 10 A, 0.31 ohm, TO-220F, Through Hole
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ManufacturerONSEMI
Manufacturer Part NoFCPF360N65S3R0L-F154
Order Code3766134
Product RangeSUPERFET III
Technical Datasheet
1,281 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY24.720 (CNY27.9336) |
| 10+ | CNY12.180 (CNY13.7634) |
| 100+ | CNY12.030 (CNY13.5939) |
| 500+ | CNY11.750 (CNY13.2775) |
| 1000+ | CNY11.460 (CNY12.9498) |
Price for:Each
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CNY24.72 (CNY27.93 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFCPF360N65S3R0L-F154
Order Code3766134
Product RangeSUPERFET III
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id10A
Drain Source On State Resistance0.31ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation27W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeSUPERFET III
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
10A
Transistor Case Style
TO-220F
Rds(on) Test Voltage
10V
Power Dissipation
27W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.31ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
SUPERFET III
SVHC
Lead (27-Jun-2024)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.032