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Quantity | Price (inc GST) |
---|---|
1+ | CNY7.180 (CNY8.1134) |
10+ | CNY5.220 (CNY5.8986) |
100+ | CNY3.570 (CNY4.0341) |
500+ | CNY2.910 (CNY3.2883) |
1000+ | CNY2.550 (CNY2.8815) |
5000+ | CNY2.200 (CNY2.486) |
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CNY7.18 (CNY8.11 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMC3612
Order Code2083247
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id16A
Drain Source On State Resistance0.092ohm
Transistor Case StyleWDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation35W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The FDMC3612 is an N-channel MOSFET produced using advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
16A
Transistor Case Style
WDFN
Rds(on) Test Voltage
10V
Power Dissipation
35W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.092ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for FDMC3612
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Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005